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| 2SC5859 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5859 HORIZONTAL DEFLECTION OUTPUT FOR HDTV, DIGITAL TV, PROJECTION TV High Voltage Low Saturation Voltage High Speed : VCBO = 1700 V : VCE (sat) = 3 V (max) : tf(2) = 0.1 s (Typ.) Unit: mm MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range DC Pulse SYMBOL VCBO VCEO VEBO IC ICP IB PC Tj Tstg RATING 1700 750 5 23 46 11.5 210 150 -55~150 UNIT V V V A A W C C JEDEC JEITA TOSHIBA 2-21F2A ELECTRICAL CHARACTERISTICS (Tc = 25C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector - Emitter Breakdown Voltage SYMBOL ICBO IEBO V (BR) CEO hFE (1) DC Current Gain hFE (2) hFE (3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Storage Time Switching Time Fall Time Storage Time Fall Time VCE (sat) VBE (sat) fT Cob tstg(1) tf(1) tstg(2) tf(2) TEST CONDITION VCB = 1700 V, IE = 0 VEB = 5 V, IC = 0 IC = 10 mA, IB = 0 VCE = 5 V, IC = 2 A VCE = 5 V, IC = 8 A VCE = 5 V, IC = 18 A IC = 18 A, IB = 4.5 A IC = 18 A, IB = 4.5 A VCE = 10 V, IC = 0.1 A VCB = 10 V, IE = 0, f = 1 MHz ICP = 8 A , IB1 (end) = 1 A fH = 32 kHz ICP = 7.5 A, IB1 (end) = 1 A fH = 100 kHz Weight: 9.75 g (typ.) Min 750 20 10 4.5 Typ. 1.0 2 320 4 0.15 1.8 0.1 Max 1 100 55 22 8 3 1.5 UNIT mA A V V V MHz pF s s 1 2004-5-18 2SC5859 IC - VCE 20 4.0 3.5 16 3.0 2.5 2.0 1.5 1.2 12 0.4 8 IB = 0.2 A Collector current IC (A) 4 0.6 0.8 1.0 Common emitter Tc = 25 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) hFE - IC 100 Tc = 100C 25 Common emitter VCE = 5 V hFE -25 DC current gain 10 1 0.01 0.1 1 10 100 Collector current IC (A) IC - VBE 30 Common emitter VCE = 5 V 25 IC (A) Collector current 20 15 Tc = 100C -25 10 25 5 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-emitter voltage VBE (V) 2 2004-5-18 2SC5859 VCE - IB 10 Common emitter Tc = -25 10 VCE(sat) - IC Common emitter Tc = -25 6 (V) Collector-emitter saturation voltage VCE(sat) (V) 8 VCE 1 10 IC/IB = 4 Collector-emitter voltage 6 10 4 12 14 16 Ic = 18 A 8 0.1 2 9 8 7 0 0 1 2 3 4 5 0.01 1 10 100 Base current IB (A) Collector current IC (A) VCE - IB 10 Common emitter Tc = 25 10 VCE (sat) - IC Common emitter Tc = 25 (V) Collector-emitter saturation voltage VCE (sat) (V) 8 6 VCE 1 IC/IB = 4 Collector-emitter voltage 6 10 4 9 2 8 7 0 0 1 2 3 4 5 12 14 16 Ic = 18 A 10 8 0.1 0.01 1 10 100 Base current IB (A) Collector current IC (A) VCE - IB 10 Common emitter Tc = 100 10 VCE (sat) - IC Common emitter Tc = 100 6 1 (V) 8 Collector-emitter saturation voltage VCE (sat) (V) VCE Collector-emitter voltage 6 10 4 9 2 8 7 0 0 12 14 16 Ic = 18 A IC/IB = 4 10 8 0.1 0.01 1 2 3 4 5 1 10 100 Base current IC (A) Collector current IC (A) 3 2004-5-18 2SC5859 rth(j-c) - tw 10 Transient thermal impedance (junction-case) rth(j-c) (C/W) 1 0.1 0.01 Tc = 25 (Infinite heat sink) Curves should be applied in thermal limited area. (single nonrepetitive pulse) 0.001 10 100 1m 10m 100m 1 10 100 1000 Pulse width tw (s) Safe Operating Area 100 IC max (Pulse)* IC max (Continuous)* 10 ms* 10 10 1 ms* 100 s* 10 s* 100 Reverse Bias - Safe Operating Area IC max (Pulse) 620V,46A Collector current IC (A) IC (A) Collector current 100 ms* 1 1 DC operation Tc = 25C 1700V,0.14A 0.1 0.1 *:Single nonrepetitive pulse Tc = 25C Curves linearly must with be derated in VCEO max 10 100 1000 increase 0.01 Ta = 25 Non repeated pulse IB2 = -3A L = 500 H 0.001 10 100 1000 VCBO max 10000 temperature. 0.01 1 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) PC - Tc 250 Infinite heat sink PC (W) Collector power dissipation 200 150 100 50 0 0 25 50 75 100 125 150 Case temperature Tc (C) 4 2004-5-18 2SC5859 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-5-18 |
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